Main application of npn UHF low noise transistor BLT 1404;
Wireless remote control switch, radar induction lamp, doorbell, vehicle anti-theft device, etc
Description:
Ultra-high frequency low noise transistor adopts planar npn silicon epitaxial bipolar process and has high power gain, low noise characteristics and large dynamic range. Due to the use of ultra-small sot - 323 seals
Installation, especially suitable for high density surface mount, mainly used for VHF, UHF high frequency and low noise broadband amplifiers.
key property
High gain: 6507s21e ︱ 2 typical value is 13.5 db @ VCE = 5v, IC = 20ma, f = 0.9 GHz
Low noise: typical nf is 1.6 db @ VCE = 5v, IC = 5ma, f = 0.9 GHz
Gain bandwidth product: ft typical value is 9 GHz @ VCE = 5v, IC = 20ma, f = 0.9 GHz
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Npn high frequency low noise transistor
describe
Ultra-high frequency low noise transistor using planar npn silicon epitaxy
Bipolar process with high power gain, low noise and large dynamic range. Due to the use of ultra-small sot - 323 seals
Installation, especially suitable for high density surface mount, mainly used for VHF, UHF high frequency and low noise broadband amplifiers.
key property
High gain: 6507s21e ︱ 2 typical value is 13.5 db @ VCE = 5v, IC = 20ma, f = 0.9 GHz
Low noise: typical nf is 1.6 db @ VCE = 5v, IC = 5ma, f = 0.9 GHz
Gain bandwidth product: ft typical value is 9 GHz @ VCE = 5v, IC = 20ma, f = 0.9 GHz
Ordering information
Limit working condition range ( ta = 25 ℃ )
Extreme value unit of parameter symbol
Collector base breakdown voltage vcbo 15 v
Collector emitter breakdown voltage vceo 9 v
Emitter-base breakdown voltage vebo 1.5 v
Collector current IC 50 ma
Power consumption PC 100 MW
Junction temperature TJ 150 ℃
Storage temperature tstg - 65 ~ + 150 ℃

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